3
ELECTRONICS
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# 3A.
Systems, Equipment and Components
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# 3A001.
Electronic items as follows:
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# a.
General purpose integrated circuits, as follows: characterisation plots of SFDR versus frequency. 3 dBfs (full scale). rate' is the rate at which the digital signal is converted to an analogue signal and the output analogue values are changed by the DAC. For DACs where the interpolation mode may be bypassed (interpolation factor of one), the DAC should be considered as a conventional (non-interpolating) DAC. update rate' is defined as the DAC update rate divided by the smallest interpolating factor. For interpolating DACs, the 'adjusted update rate' may be referred to by different terms including: - input data rate - input word rate - input sample rate - maximum total input bus rate - maximum DAC clock rate for DAC clock input.
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# 1.
Integrated circuits designed or rated as radiation hardened to withstand any of the following:
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# 2.
"Microprocessor microcircuits", "microcomputer microcircuits", microcontroller microcircuits, storage integrated circuits manufactured from a compound semiconductor, Analogue-to-Digital Converters (ADCs), integrated circuits that contain ADCs and store or process the digitised data, Digital-to-Analogue Converters (DACs), electro-optical or "optical integrated circuits" designed for "signal processing", field programmable logic devices, custom integrated circuits for which either the function is unknown or the control status of the equipment in which the integrated circuit will be used is unknown, Fast Fourier Transform (FFT) processors, Static Random-Access Memories (SRAMs), or 'non-volatile memories', having any of the following:
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# 3.
"Microprocessor microcircuits", "microcomputer microcircuits" and microcontroller microcircuits, manufactured from a compound semiconductor and operating at a clock frequency exceeding 40 MHz;
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# 4.
Not used;
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# 5.
Analogue-to-Digital Converter (ADC) and Digital-to-Analogue Converter (DAC) integrated circuits, as follows:
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# a.
ADCs having any of the following:
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# 1.
A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1.3 Giga Samples Per Second (GSPS);
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# 2.
A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 600 Mega Samples Per Second (MSPS);
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# 3.
A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 400 MSPS;
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# 4.
A resolution of 14 bit or more, but less than 16 bit, with a "sample rate" greater than 250 MSPS; or
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# 5.
A resolution of 16 bit or more with a "sample rate" greater than 65 MSPS;
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# b.
DACs having any of the following:
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# 1.
A resolution of 10 bit or more, but less than 12 bit, with an 'adjusted update rate' exceeding 3 500 MSPS; or
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# 2.
A resolution of 12 bit or more and having any of the following:
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# a.
An 'adjusted update rate' exceeding 1 250 MSPS but not exceeding 3 500 MSPS, and having any of the following:
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# 1.
A settling time less than 9 ns to arrive at or within 0.024% of full scale from a full scale step; or
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# 2.
A 'Spurious Free Dynamic Range' (SFDR) greater than 68 dBc (carrier) when synthesising a full scale analogue signal of 100 MHz or the highest full scale analogue signal frequency specified below 100 MHz; or
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# b.
An 'adjusted update rate' exceeding 3 500 MSPS;
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# 6.
Electro-optical and "optical integrated circuits", designed for "signal processing" and having all of the following:
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# 7.
Field programmable logic devices having any of the following:
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# 8.
Not used;
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# 9.
Neural network integrated circuits; N.B For integrated circuits, having one or more digital processing units having a 'Total Processing Performance' ('TPP') of 6 000 or more, see 3A501.a.16.
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# 10.
Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following:
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# 11.
Digital integrated circuits, other than those described in 3A001.a.3. to 3A001.a.10. and 3A001.a.12., based upon any compound semiconductor and having any of the following:
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# 12.
Fast Fourier Transform (FFT) processors having a rated execution time for an N-point complex FFT of less than (N log2 N) /20 480 ms, where N is the number of points;
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# 13.
Direct Digital Synthesizer (DDS) integrated circuits having any of the following:
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# 14.
Integrated circuits that perform or are programmable to perform all of the following:
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# a.
Analogue-to-digital conversions meeting any of the following:
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# 1.
A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1.3 Giga Samples Per Second (GSPS);
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# 2.
A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 1.0 GSPS;
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# 3.
A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 1.0 GSPS;
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# 4.
A resolution of 14 bit or more, but less than 16 bit, with a "sample rate" greater than 400 Mega Samples Per Second (MSPS); or
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# 5.
A resolution of 16 bit or more with a "sample rate" greater than 180 MSPS; and
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# b.
Any of the following:
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# b.
Microwave or millimetre wave items as follows:
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# 5.
Electronically or magnetically tunable band-pass or band-stop filters, having more than 5 tunable resonators capable of tuning across a 1.5:1 frequency band (fmax/fmin) in less than 10 µs and having any of the following:
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# 6.
Not used;
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# 7.
Converters and harmonic mixers, that are any of the following:
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# a.
Designed to extend the frequency range of "signal analysers" beyond 110 GHz;
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# b.
Designed to extend the operating range of signal generators as follows:
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# c.
Designed to extend the operating range of network analysers as follows:
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# d.
Designed to extend the frequency range of microwave test receivers beyond 110 GHz;
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# 8.
Microwave power amplifiers containing "vacuum electronic devices" specified in 3A001.b.1. and having all of the following:
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# 9.
Microwave power modules (MPM) consisting of, at least, a travelling wave "vacuum electronic device", a "monolithic microwave integrated circuit" ("MMIC") and an integrated electronic power conditioner and having all of the following:
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# 10.
Oscillators or oscillator assemblies, specified to operate with a single sideband (SSB) phase noise, in dBc/Hz, less (better) than -(126 + 20log10F - 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz;
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# 11.
'Frequency synthesizer' "electronic assemblies" having a "frequency switching time" as specified by any of the following:
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# a.
Less than 143 ps;
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# b.
Less than 100 µs for any frequency change exceeding 2.2 GHz within the synthesised frequency range exceeding 4.8 GHz but not exceeding 31.8 GHz;
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# c.
Not used;
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# d.
Less than 500 µs for any frequency change exceeding 550 MHz within the synthesised frequency range exceeding 31.8 GHz but not exceeding 37 GHz;
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# e.
Less than 100 µs for any frequency change exceeding 2.2 GHz within the synthesised frequency range exceeding 37 GHz but not exceeding 75 GHz; or
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# f.
Less than 100 µs for any frequency change exceeding 5.0 GHz within the synthesised frequency range exceeding 75 GHz but not exceeding 90 GHz; or
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# g.
Less than 1 ms within the synthesized frequency range exceeding 90 GHz;
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# 12.
'Transmit/receive modules', 'transmit/receive MMICs', 'transmit modules', and 'transmit MMICs', rated for operation at frequencies above 2.7 GHz and having all of the following:
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# a.
A peak saturated power output (in watts), Psat, greater than 505.62 divided by the maximum operating frequency (in GHz) squared [Psat>505.62 W*GHz2/fGHz2] for any channel;
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# b.
A "fractional bandwidth" of 5% or greater for any channel;
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# c.
Any planar side with length d (in cm) equal to or less than 15 divided by the lowest operating frequency in GHz [d ≤ 15cm*GHz*N/fGHz] where N is the number of transmit or transmit/receive channels; and
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# d.
An electronically variable phase shifter per channel.
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# c.
Acoustic wave devices as follows and specially designed components therefor:
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# 1.
Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having any of the following:
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# 2.
Bulk (volume) acoustic wave devices which permit the direct processing of signals at frequencies exceeding 6 GHz;
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# 3.
Acoustic-optic "signal processing" devices employing interaction between acoustic waves (bulk wave or surface wave) and light waves which permit the direct processing of signals or images, including spectral analysis, correlation or convolution;
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# d.
Electronic devices and circuits containing components, manufactured from "superconductive" materials, specially designed for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents and having any of the following:
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# 1.
Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10-14 J; or
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# 2.
Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10 000;
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# e.
High energy devices as follows:
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# 1.
'Cells' as follows:
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# 2.
High energy storage capacitors as follows:
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# 3.
"Superconductive" electromagnets and solenoids, specially designed to be fully charged or discharged in less than one second and having all of the following:
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# 4.
Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are "space-qualified", having a minimum average efficiency exceeding 20% at an operating temperature of 301 K (28°C) under simulated 'AM0' illumination with an irradiance of 1 367 watts per square metre (W/m2);
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# f.
Rotary input type absolute position encoders having an "accuracy" equal to or less (better) than 1.0 second of arc and specially designed encoder rings, discs or scales therefor;
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# g.
Solid-state pulsed power switching thyristor devices and 'thyristor modules', using either electrically, optically, or electron radiation controlled switch methods and having any of the following:
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# h.
Solid-state power semiconductor switches, diodes, or 'modules', having all of the following:
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# i.
Intensity, amplitude, or phase electro-optic modulators, designed for analogue signals and having any of the following:
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# 1.
A maximum operating frequency of more than 10 GHz but less than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following:
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# 2.
A maximum operating frequency equal to or greater than 20 GHz, an optical insertion loss equal to or less than 3 dB and having any of the following:
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# 3A002.
General purpose "electronic assemblies", modules and equipment, as follows:
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# a.
Recording equipment and oscilloscopes as follows:
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# b.
Not used;
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# c.
"Signal analysers" as follows: of discovery is equivalent to the minimum signal duration necessary for the specified level measurement uncertainty. mechanism where the trigger function is able to select a frequency range to be triggered on as a subset of the acquisition bandwidth while ignoring other signals that may also be present within the same acquisition bandwidth. A 'frequency mask trigger' may contain more than one independent set of limits.
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# 1.
"Signal analysers" having a 3 dB resolution bandwidth (RBW) exceeding 40 MHz anywhere within the frequency range exceeding 31.8 GHz but not exceeding 37 GHz;
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# 2.
"Signal analysers" having a Displayed Average Noise Level (DANL) less (better) than -160 dBm/Hz anywhere within the frequency range exceeding 43.5 GHz but not exceeding 110 GHz;
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# 3.
"Signal analysers" having a frequency exceeding 110 GHz;
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# 4.
"Signal analysers" having all of the following:
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# a.
'Real-time bandwidth' exceeding 520 MHz; and
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# b.
Having any of the following:
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# 1.
100% probability of discovery, with less than a 3 dB reduction from full amplitude due to gaps or windowing effects of signals having a duration of 8 µs or less; or
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# 2.
A 'frequency mask trigger' function with 100% probability of trigger (capture) for signals having a duration of 8 µs or less;
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# 5.
Not used;
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# d.
Signal generators having any of the following:
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# 1.
Specified to generate pulse-modulated signals having all of the following, anywhere within the frequency range exceeding 31.8 GHz but not exceeding 37 GHz:
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# 2.
An output power exceeding 100 mW (20 dBm) anywhere within the frequency range exceeding 43.5 GHz but not exceeding 110 GHz;
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# 3.
A "frequency switching time" as specified by any of the following:
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# a.
Not used;
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# b.
Less than 100 µs for any frequency change exceeding 2.2 GHz within the frequency range exceeding 4.8 GHz but not exceeding 31.8 GHz;
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# c.
Not used;
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# d.
Less than 500 µs for any frequency change exceeding 550 MHz within the frequency range exceeding 31.8 GHz but not exceeding 37 GHz;
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# e.
Less than 100 µs for any frequency change exceeding 2.2 GHz within the frequency range exceeding 37 GHz but not exceeding 75 GHz; or
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# f.
Not used;
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# g.
Less than 100 µs for any frequency change exceeding 5.0 GHz within the frequency range exceeding 75 GHz but not exceeding 110 GHz.
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# 4.
A single sideband (SSB) phase noise, in dBc/Hz, specified as being any of the following:
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# a.
Less (better) than -(126 + 20log10F - 20log10f) anywhere within the range of 10 Hz ≤ F ≤ 10 kHz anywhere within the frequency range exceeding 3.2 GHz but not exceeding 110 GHz; or
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# b.
Less (better) than –(206- 20log10f) anywhere within the range of 10 kHz < F ≤ 100 kHz anywhere within the frequency range exceeding 3.2 GHz but not exceeding 110 GHz;
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# 5.
An 'RF modulation bandwidth' of digital baseband signals as specified by any of the following:
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# a.
Exceeding 2.2 GHz within the frequency range exceeding 4.8 GHz but not exceeding 31.8 GHz;
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# b.
Exceeding 550 MHz within the frequency range exceeding 31.8 GHz but not exceeding 37 GHz; or
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# c.
Exceeding 2.2 GHz within the frequency range exceeding 37 GHz but not exceeding 75 GHz;
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# d.
Exceeding 5.0 GHz within the frequency range exceeding 75 GHz but not exceeding 90 GHz; or
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# 6.
A maximum frequency exceeding 110 GHz;
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# e.
Network analysers having any of the following:
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# 1.
An output power exceeding 100 mW (20 dBm) anywhere within the operating frequency range exceeding 43.5 GHz but not exceeding 100 GHz;
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# 2.
Not used;
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# 3.
'Nonlinear vector measurement functionality' at frequencies exceeding 50 GHz but not exceeding 110 GHz; or Technical Note For the purposes of 3A002.e.3., 'nonlinear vector measurement functionality' is an instrument’s ability to analyse the test results of devices driven into the large-signal domain or the non-linear distortion range.
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# 4.
A maximum operating frequency exceeding 110 GHz;
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# f.
Microwave test receivers having all of the following:
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# g.
Atomic frequency standards being any of the following:
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# h.
"Electronic assemblies", modules, or equipment, specified to perform all of the following:
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# 1.
Analogue-to-digital conversions meeting any of the following:
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# a.
A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1.3 Giga Samples Per Second (GSPS);
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# b.
A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 1.0 GSPS;
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# c.
A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 1.0 GSPS;
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# d.
A resolution of 14 bit or more, but less than 16 bit, with a "sample rate" greater than 400 Mega Samples Per Second (MSPS); or
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# e.
A resolution of 16 bit or more with a "sample rate" greater than 180 MSPS; and
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# 2.
Any of the following:
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# 3A003.
Spray cooling thermal management systems employing closed loop fluid handling and reconditioning equipment in a sealed enclosure where a dielectric fluid is sprayed onto electronic components using specially designed spray nozzles that are designed to maintain electronic components within their operating temperature range, and specially designed components therefor.
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# 3A101.
Electronic equipment, devices and components, other than those specified in 3A001, as follows:
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# a.
Analogue-to-digital converters, usable in "missiles", designed to meet military specifications for ruggedized equipment;
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# b.
Accelerators capable of delivering electromagnetic radiation produced by bremsstrahlung from accelerated electrons of 2 MeV or greater, and systems containing those accelerators.
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# 3A102.
'Thermal batteries' designed or modified for 'missiles'.
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# 3A201.
Electronic components, other than those specified in 3A001, as follows;
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# a.
Capacitors having either of the following sets of characteristics:
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# b.
Superconducting solenoidal electromagnets having all of the following characteristics:
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# c.
Flash X-ray generators or pulsed electron accelerators having either of the following sets of characteristics: Q equals the integral of i with respect to t, over the lesser of 1 µs or the time duration of the beam pulse (Q = ∫ idt), where i is beam current in amperes and t is time in seconds.
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# 1.
a. An accelerator peak electron energy of 500 keV or greater but less than 25 MeV; and
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# b.
With a 'figure of merit' (K) of 0.25 or greater; or
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# 2.
a. An accelerator peak electron energy of 25 MeV or greater; and
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# b.
A 'peak power' greater than 50 MW.
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# 3.
In machines based on microwave accelerating cavities, the time duration of the beam pulse is the lesser of 1 µs or the duration of the bunched beam packet resulting from one microwave modulator pulse.
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# 4.
In machines based on microwave accelerating cavities, the peak beam current is the average current in the time duration of a bunched beam packet.
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# 3A225.
Frequency changers or generators, other than those specified in 0B001.b.13., usable as a variable or fixed frequency motor drive, having all of the following characteristics:
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# 3A226.
High-power direct current power supplies, other than those specified in 0B001.j.6., having both of the following characteristics:
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# 3A227.
High-voltage direct current power supplies, other than those specified in 0B001.j.5., having both of the following characteristics:
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# 3A228.
Switching devices, as follows:
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# a.
Cold-cathode tubes, whether gas filled or not, operating similarly to a spark gap, having all of the following characteristics:
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# b.
Triggered spark-gaps having both of the following characteristics:
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# c.
Modules or assemblies with a fast switching function, other than those specified in 3A001.g. or 3A001.h., having all of the following characteristics:
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# 3A229.
High-current pulse generators as follows:
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# a.
Detonator firing sets (initiator systems, firesets), including electronically-charged, explosively-driven and optically-driven firing sets, other than those specified in 1A007.a., designed to drive multiple controlled detonators specified in 1A007.b.;
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# b.
Modular electrical pulse generators (pulsers) having all of the following characteristics:
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# 1.
Designed for portable, mobile, or ruggedized-use;
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# 2.
Capable of delivering their energy in less than 15 µs into loads of less than 40 ohms;
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# 3.
Having an output greater than 100 A;
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# 4.
No dimension greater than 30 cm;
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# 5.
Weight less than 30 kg; and
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# 6.
Specified for use over an extended temperature range 223 K (-50oC) to 373 K (100oC) or specified as suitable for aerospace applications.
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# c.
Micro-firing units having all of the following characteristics:
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# 3A230.
High-speed pulse generators, and 'pulse heads' therefor, having both of the following characteristics:
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# 3A231.
Neutron generator systems, including tubes, having both of the following characteristics:
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# 3A232.
Multipoint initiation systems, other than those specified in 1A007, as follows:
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# 3A233.
Mass spectrometers, other than those specified in 0B002.g., capable of measuring ions of 230 u or greater and having a resolution of better than 2 parts in 230, as follows, and ion sources therefor:
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# a.
Inductively coupled plasma mass spectrometers (ICP/MS);
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# b.
Glow discharge mass spectrometers (GDMS);
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# c.
Thermal ionization mass spectrometers (TIMS);
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# d.
Electron bombardment mass spectrometers having both of the following features:
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# e.
Not used;
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# f.
Mass spectrometers equipped with a microfluorination ion source designed for actinides or actinide fluorides.
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# 3A234.
Striplines to provide low inductance path to detonators with the following characteristics:
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# a.
Voltage rating greater than 2 kV; and b Inductance of less than 20 nH.
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# 3A501.
Electronic items, as follows:
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# a.
General purpose integrated circuits, as follows:
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# 15.
Complementary Metal Oxide Semiconductor (CMOS) integrated circuits, not specified in 3A001.a.2., designed to operate at an ambient temperature equal to or less (better) than 4.5 K (-268.65°C).
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# 16.
Integrated circuits having one or more digital processing units having a 'Total Processing Performance' ('TPP') of 6 000 or more.
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# b.
Microwave or millimetre wave items as follows:
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# 13.
Parametric signal amplifiers having all of the following:
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# 3A502.
General purpose "electronic assemblies", modules and equipment, as follows:
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# i.
"Electronic assemblies", modules or equipment, containing one or more 'user configurable' Field Programmable Logic Devices (FPLDs) and having an ‘aggregate lookup table input count' of greater than or equal to 1 800 000.
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# 3A504.
Cryogenic cooling systems and components, as follows:
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# a.
Systems rated to provide a cooling power greater than or equal to 600 μW at or below a temperature of 0.1 K (-273.05°C) for a period of greater than 48 hours;
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# b.
Two-stage pulse tube cryocoolers rated to maintain a temperature below 4 K (-269.15°C) and provide a cooling power greater than or equal to 1.5 W at or below a temperature of 4.2 K (-268.95°C).
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# 3B.
Test, Inspection and Production Equipment
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# 3B001.
Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor:
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# a.
Equipment designed for epitaxial growth as follows:
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# 1.
Equipment designed or modified to produce a layer of any material other than silicon with a thickness uniform to less than ± 2.5% across a distance of 75 mm or more;
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# 2.
Metal Organic Chemical Vapour Deposition (MOCVD) reactors designed for compound semiconductor epitaxial growth of material having two or more of the following elements: aluminium, gallium, indium, arsenic, phosphorus, antimony, oxygen or nitrogen;
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# 3.
Molecular beam epitaxial growth equipment using gas or solid sources;
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# b.
Equipment designed for ion implantation and having any of the following:
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# 1.
Not used;
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# 2.
Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant;
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# 3.
Direct write capability;
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# 4.
A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material "substrate"; or
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# 5.
Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material "substrate" heated to 600°C or greater;
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# c.
Not used;
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# d.
Not used;
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# e.
Automatic loading multi-chamber central wafer handling systems having all of the following:
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# 1.
Interfaces for wafer input and output, to which more than two functionally different 'semiconductor process tools' specified in 3B001.a.1., 3B001.a.2., 3B001.a.3. or 3B001.b. are designed to be connected; and
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# 2.
Designed to form an integrated system in a vacuum environment for 'sequential multiple wafer processing';
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# f.
Lithography equipment as follows:
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# 1.
Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:
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# 2.
Imprint lithography equipment capable of producing features of 45 nm or less;
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# 3.
Equipment specially designed for mask making having all of the following:
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# 4.
Equipment designed for device processing using direct writing methods, having all of the following:
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# g.
Masks and reticles, designed for integrated circuits specified in 3A001;
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# h.
Multi-layer masks with a phase shift layer not specified in 3B001.g. and designed to be used by lithography equipment having a light source wavelength less than 245 nm;
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# i.
Imprint lithography templates designed for integrated circuits specified in 3A001.
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# j.
Mask "substrate blanks" with multilayer reflector structure consisting of molybdenum and silicon, and having all of the following:
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# 3B002.
Test equipment specially designed for testing finished or unfinished semiconductor devices as follows and specially designed components and accessories therefor:
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# 3B501.
Equipment for the manufacturing of semiconductor devices or materials, as follows and specially designed components and accessories therefor:
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# a.
Equipment designed for epitaxial growth as follows:
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# b.
Not used;
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# c.
Not used;
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# d.
Not used;
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# e.
Not used;
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# f.
Lithography equipment as follows:
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# 1.
Align and expose step and repeat (direct step on wafer) or step and scan (scanner) lithography equipment for wafer processing, not specified in 3B001.f., using photo-optical or X-ray methods, and having any of the following:
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# g.
Not used;
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# h.
Not used;
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# i.
Not used;
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# j.
Not used;
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# k.
Equipment designed for dry etching having any of the following;
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# l.
'Extreme Ultraviolet' ('EUV') masks and 'EUV' reticles, designed for integrated circuits, not specified in 3B001.g., and having a mask "substrate blank" specified in 3B001.j.;
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# m.
'Pellicles' specially designed for 'Extreme Ultraviolet' ('EUV') lithography;
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# n.
Semiconductor manufacturing deposition equipment as follows:
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# 1.
Atomic Layer Deposition (ALD) equipment as follows:
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# a.
Equipment designed for the deposition of tungsten to fill an entire interconnect or in a channel less than 40 nm wide;
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# b.
Equipment designed for 'area selective deposition' of a metal or metal nitride sidewall barrier using an organometallic compound precursor;
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# c.
Equipment designed for the deposition of a 'work function metal' composed of titanium aluminium carbide (TiAlC) and having a work function greater than 4 eV, and having all of the following:
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# 2.
Equipment designed for cobalt electroplating or cobalt electroless-plating deposition processes;
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# 3.
Equipment designed for Chemical Vapour Deposition (CVD) of cobalt fill metal;
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# 4.
Equipment designed for 'selective bottom-up' Chemical Vapour Deposition (CVD) of tungsten fill metal;
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# 5.
Equipment designed for void-free plasma enhanced deposition of a layer with a dielectric constant less than 3.3, in 'gaps' having an 'aspect ratio' equal to or greater than 1:1 and a width less than 25 nm;
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# 6.
Equipment designed for the deposition of a ruthenium layer using an organometallic compound precursor, while maintaining the wafer substrate at a temperature greater than 293.15 K (20°C) and less than 773.15 K (500°C);
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# 7.
Equipment designed for multistep processing in multiple chambers and maintaining high vacuum or inert environment during transfer between process steps, as follows:
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# a.
Equipment designed to fabricate a metal contact by performing all of the following processes:
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# 1.
Surface treatment plasma process using hydrogen, hydrogen and nitrogen, or ammonia, while maintaining the wafer substrate at a temperature greater than 373.15 K (100°C) and less than 773.15 K (500°C);
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# 2.
Surface treatment plasma process using oxygen or ozone, while maintaining the wafer substrate at a temperature greater than 313.15 K (40°C) and less than 773.15 K (500°C); and
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# 3.
Deposition of a tungsten layer while maintaining the wafer substrate at a temperature greater than 373.15 K (100°C) and less than 773.15 K (500°C);
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# b.
Equipment designed to fabricate a metal contact by performing all of the following processes:
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# c.
Equipment designed to fabricate a metal contact by performing all of the following processes:
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# 1.
Deposition of a titanium nitride or tungsten carbide layer, using an organometallic compound precursor, while maintaining the wafer substrate at a temperature greater than 293.15 K (20°C) and less than 773.15 K (500°C);
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# 2.
Deposition of a cobalt layer using a physical sputter deposition technique and having a process pressure greater than 1.33x10-1 Pa (1 mTorr) and less than 1.33x101 Pa (100 mTorr), while maintaining the wafer substrate at temperature less than 773.15 K (500°C); and
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# 3.
Deposition of a cobalt layer using an organometallic compound precursor and having a process pressure greater than 1.33x102 Pa (1 Torr) and less than 1.33x104 Pa (100 Torr), while maintaining the wafer substrate at temperature greater than 293.15 K (20°C) and less than 773.15 K (500°C);
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# d.
Equipment designed to fabricate copper interconnects by performing all of the following processes:
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# 1.
Deposition of a cobalt or ruthenium layer using an organometallic compound precursor and having a process pressure greater than 1.33x102 Pa (1 Torr) and less than 1.33x104 Pa (100 Torr), while maintaining the wafer substrate at a temperature greater than 293.15 K (20°C) and less than 773.15 K (500°C); and
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# 2.
Deposition of a copper layer using a physical vapour deposition technique having a process pressure greater than 1.33x10-1 Pa (1 mTorr) and less than 1.33x101 Pa (100 mTorr), while maintaining the wafer substrate at a temperature less than 773.15 K (500°C);
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-
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# 8.
Equipment designed to fabricate a metal contact by multistep processing within a single chamber by performing all of the following:
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-
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# 3B503.
Scanning Electron Microscope (SEM) equipment designed for imaging semiconductor devices or integrated circuits, having all of the following:
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# a.
Stage placement accuracy less (better) than 30 nm;
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# b.
Stage positioning measurement performed using laser interferometry;
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# c.
Position calibration within a Field-Of-View (FOV) based on laser interferometer length-scale measurement;
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# d.
Collection and storage of images having more than 2 x 108 pixels;
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# e.
FOV overlap of less than 5% in vertical and horizontal directions;
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# f.
Stitching overlap of FOV less than 50 nm; and
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# g.
Accelerating voltage more than 21 kV;
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# 3B504.
Cryogenic wafer probing equipment having all of the following:
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# 3C.
Materials
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# 3C001.
Hetero-epitaxial materials, not specified in 3C507, consisting of a "substrate" having stacked epitaxially grown multiple layers of any of the following:
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# 3C002.
Resist materials as follows and "substrates" coated with the following resists:
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# a.
Resists designed for semiconductor lithography as follows:
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# b.
All resists designed for use with electron beams or ion beams, with a sensitivity of 0.01 µcoulomb/mm2 or better;
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# c.
Not used;
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# d.
All resists optimised for surface imaging technologies;
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# e.
All resists designed or optimised for use with imprint lithography equipment specified in 3B001.f.2. that use either a thermal or photo-curable process.
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# 3C003.
Organo-inorganic compounds as follows:
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# 3C004.
Hydrides of phosphorus, arsenic or antimony, having a purity greater (better) than 99.999%, even diluted in inert gases or hydrogen.
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# 3C005.
High resistivity materials as follows
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# a.
Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3) or diamond semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10,000 ohm-cm at 20°C;
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# b.
Polycrystalline "substrates" or polycrystalline ceramic "substrates", having resistivities greater than 10,000 ohm-cm at 20°C and having at least one non-epitaxial single-crystal layer of silicon (Si), silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3) or diamond on the surface of the "substrate".
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# 3C006.
Materials, not specified in 3C001, consisting of a "substrate" specified in 3C005 with at least one epitaxial layer of silicon carbide, gallium nitride, aluminium nitride, aluminium gallium nitride, gallium oxide (Ga2O3) or diamond
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# 3C507.
Epitaxial materials consisting of a "substrate" having at least one epitaxially grown layer of any of the following:
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# 3C508.
Fluorides, hydrides, or chlorides of silicon or germanium, containing any of the following:
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# 3C509.
Silicon, silicon oxides, germanium or germanium oxides, containing any of the following:
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# 3D.
Software
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# 3D001.
"Software" specially designed for the "development" or "production" of equipment specified in 3A001.b. to 3A002.h., 3A501.b.13. or 3B.
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# 3D002.
"Software" specially designed for the "use" of equipment specified in 3A225, 3B001.a. to 3B001.f., 3B002, 3B501.a.4., 3B501.f.1., 3B501.k. or 3B501.n.
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# 3D003.
'Computational lithography' "software" specially designed for the "development" of patterns on EUV-lithography masks or reticles.
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# 3D004.
"Software" specially designed for the "development" of equipment specified in 3A003.
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# 3D005.
"Software" specially designed to restore normal operation of a microcomputer, "microprocessor microcircuit" or "microcomputer microcircuit" within 1 ms after an Electromagnetic Pulse (EMP) or Electrostatic Discharge (ESD) disruption, without loss of continuation of operation.
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# 3D006.
'Electronic Computer-Aided Design' ('ECAD') "software" specially designed for the "development" of integrated circuits having any "Gate-All-Around Field-Effect Transistor" ("GAAFET") structure, and having any of the following:
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# 1.
'Electronic Computer-Aided Design' ('ECAD') is a category of "software" tools used for designing, analysing, optimising, and validating the performance of integrated circuit or printed circuit board.
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# 2.
'Register Transfer Level' ('RTL') is a design abstraction which models a synchronous digital circuit in terms of the flow of digital signals between hardware registers, and the logical operations performed on those signals
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# 3.
'Geometrical Database Standard II' ('GDSII') is a database file format for data exchange of integrated circuit or integrated circuit layout artwork.
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# a.
Specially designed for implementing 'Register Transfer Level' ('RTL') to 'Geometrical Database Standard II' ('GDSII') or equivalent standard; or
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# b.
Specially designed for optimisation of power or timing rules. Technical Notes For the purposes of 3D006:
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# 3D101.
"Software" specially designed or modified for the "use" of equipment specified in 3A101.b.
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# 3D225.
"Software" specially designed to enhance or release the performance of frequency changers or generators to meet the characteristics of 3A225.
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# 3D507.
"Software" designed to extract 'GDSII' or equivalent standard layout data and perform layer-to-layer alignment from Scanning Electron Microscope (SEM) images, and generate multi-layer 'GDSII' data or the circuit netlist.
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-
# 3E.
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# 3E001.
"Technology" according to the General Technology Note for the "development" or "production" of equipment or materials specified in 3A, 3B or 3C;
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# 3E002.
"Technology" according to the General Technology Note, other than that specified in 3E001, for the "development" or "production" of a "microprocessor microcircuit", "microcomputer microcircuit" or microcontroller microcircuit core, having an arithmetic logic unit with an access width of 32 bits or more and any of the following features or characteristics:
-
# a.
A 'vector processor unit' designed to perform more than two calculations on 'floating-point' vectors (one-dimensional arrays of 32-bit or larger numbers) simultaneously;
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# b.
'Designed to perform more than four 64-bit or larger 'floating-point' operation results per cycle; or
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# c.
Designed to perform more than eight 16-bit 'fixed-point' multiply-accumulate results per cycle (e.g., digital manipulation of analogue information that has been previously converted into digital form, also known as digital "signal processing").
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# 3E003.
Other "technology" for the "development" or "production" of the following:
-
# a.
Vacuum microelectronic devices;
-
# b.
Hetero-structure semiconductor electronic devices such as High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Transistors (HBTs), quantum well and super lattice devices;
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# c.
"Superconductive" electronic devices;
-
# d.
Substrates of diamond for electronic components.
-
# e.
Substrates of silicon-on-insulator (SOI) for integrated circuits in which the insulator is silicon dioxide;
-
# f.
Substrates of silicon carbide for electronic components;
-
# g.
"Vacuum electronic devices" operating at frequencies of 31.8 GHz or higher;
-
# h.
Substrates of gallium oxide for electronic components.
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# 3E004.
"Technology" "required" for the slicing, grinding and polishing of 300 mm diameter silicon wafers to achieve a 'Site Front least sQuares Range' ('SFQR') less than or equal to 20 nm at any site of 26 mm x 8 mm on the front surface of the wafer and an edge exclusion less than or equal to 2 mm.
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# 3E101.
"Technology" according to the General Technology Note for the "use" of equipment or "software" specified in 3A001.a.1. or 2., 3A101, 3A102 or 3D101.
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# 3E102.
"Technology" according to the General Technology Note for the "development" of "software” specified in 3D101.
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# 3E201.
"Technology" according to the General Technology Note for the "use" of equipment specified in 3A001.e.2., 3A001.e.3., 3A001.g., 3A201, 3A225 to 3A234.
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# 3E225.
"Technology", in the form of codes or keys, to enhance or release the performance of frequency changers or generators to meet the characteristics of 3A225.
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# 3E505.
"Technology" according to the General Technology Note for the "development" or "production" of integrated circuits or devices, using "Gate-All-Around Field-Effect Transistor" ("GAAFET") structures.
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